Design of wide-IF-band CMOS mixer with LO multiplier

Author

Han-Ting Tsai ; Pei-Ling Tseng ; Che-Wei Chang ; Hu, Rose ; Jou, Christina F.

Author_Institution

Electr. & Comput. Eng, Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

176

Lastpage

178

Abstract

This paper reports the development of K-band wide-IF-band CMOS mixer with LO multiplier suitable for wideband applications. To achieve such broad bandwidth, several design techniques - such as current-reuse differential-pair with LC resonance circuit, and simultaneous in-band gain peaking and off-band gain tailoring - have been analyzed and employed. The on-wafer measurement of this 17.4-26.1GHz TSMC 0.18μm CMOS mixer with LO doubler shows a -1dB conversion gain, 11dB noise figure, -6dBm input-referred 1dB compression point, 40dB RF-IF isolation, and 45dB LO-IF isolation at 8.7GHz. The chip size is 1400 × 1300μm².

Keywords

CMOS integrated circuits; integrated circuit design; microwave mixers; multiplying circuits; LC resonance circuit; LO multiplier; current reuse differential pair; frequency 17.4 GHz to 26.1 GHz; frequency 8.7 GHz; gain -1 dB; in band gain peaking; noise figure 11 dB; off band gain tailoring; on wafer measurement; size 0.18 mum; wide IF band CMOS mixer; wideband applications; CMOS integrated circuits; Microwave circuits; Mixers; RLC circuits; Radio frequency; Resistors; Transistors; CMOS; MMIC; mixer; multiplier; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695085

Filename

6695085