A K-band SiGe BiCMOS fully integrated up-conversion mixer

Author

Cuong Huynh ; Jaeyoung Lee ; Cam Nguyen

Author_Institution

Dept. of ECE, Texas A&M Univ., College Station, TX, USA

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

185

Lastpage

187

Abstract

The design of a fully integrated 0.18-μm SiGe BiCMOS up-conversion mixer in K-band is presented. The mixer consists of a single-ended-to-differential active balun, double-balanced Gilber mixer cell, differential amplifier and band pass filter. The input active balun is used to facilitate on-wafer characterization from a single-ended IF signal. With an LO power of -2 dBm, the mixer exhibits a conversion gain of 25.7 dB, 1-dB input power of -23 dBm, 1-dB output power of 1.36 dBm, and maximum output power of 2.7 dBm at 24.5 GHz, while consuming a DC current of 40 mA from a supply voltage of 1.8V. Design procedure, parameter trade-off, simulation, and layout issues of the mixer are discussed.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; band-pass filters; differential amplifiers; microwave mixers; K-band BiCMOS up-conversion mixer; SiGe; band pass filter; current 40 mA; differential amplifier; double-balanced Gilber mixer cell; frequency 24.5 GHz; gain 25.7 dB; on-wafer characterization; single-ended-to-differential active balun; size 0.18 mum; voltage 1.8 V; Frequency measurement; Gain; Impedance matching; K-band; Mixers; Power measurement; Transistors; BiCMOS; CMOS; Gilbert mixer; Mixer; RFIC; balun;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695088

Filename

6695088