A low-power 77 GHz transceiver for automotive radar system in 65 nm CMOS technology

Author

Seong-Kyun Kim ; Chenglin Cui ; Sangwook Nam ; Byung-Sung Kim

Author_Institution

Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

236

Lastpage

238

Abstract

A fully-integrated low power 77 GHz radar transceiver in 65 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer based on a tripler. The receiver front-end provides a conversion gain of 21 dB, and the PA has an output power over 10 dBm. The phase noise of VCO is -75 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 217 mW and the size of the chip is 0.8 × 1.1 mm².

Keywords

CMOS integrated circuits; frequency synthesizers; low noise amplifiers; mixers (circuits); phase noise; radio receivers; radio transceivers; road vehicle radar; CMOS technology; LNA; VCO; automotive radar system; down-conversion mixer; frequency 77 GHz; frequency synthesizer; fully-integrated low power radar transceiver; low-noise amplifier; phase noise; power amplifier; receiver front-end; total dc power dissipation; tripler; CMOS integrated circuits; Gain; Mixers; Power demand; Radar; Transceivers; Voltage-controlled oscillators; CMOS integrated circuit; W-band; millimeter-wave; power amplifier; radar; transceiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695105

Filename

6695105