Title :
A concurrent dual-band low-noise amplifier for K- and Ka-band applications in SiGe BiCMOS technology
Author :
Jaeyoung Lee ; Cam Nguyen
Author_Institution :
Dept. of ECE, Texas A&M Univ., College Station, TX, USA
Abstract :
A 24/35-GHz BiCMOS concurrent dual-band low-noise amplifier (DBLNA) has been developed. The proposed concurrent DBLNA was designed using new active notch filters embedded into a wideband LNA. The concurrent DBLNA has measured peak gains of 21.9/16.6 dB at 23.5/35.7 GHz, respectively. The measured 3-dB bandwidths of the low and high pass-bands are 7.7 GHz (18.8-26.5 GHz) and 8.8 GHz (32.8-41.6 GHz), respectively. The best noise figures measured in the passbands are 5.1/7.2 dB at 22/35.6 GHz, respectively. The measured IIP3 performances are -10.4/-8.3 dBm at 24/35 GHz, respectively.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; active filters; low noise amplifiers; microwave amplifiers; microwave filters; microwave integrated circuits; millimetre wave amplifiers; millimetre wave filters; millimetre wave integrated circuits; notch filters; BiCMOS technology; DBLNA; K-band applications; Ka-band applications; SiGe; active notch filters; bandwidth 7.7 GHz; bandwidth 8.8 GHz; concurrent dual-band low-noise amplifier; frequency 18.8 GHz to 26.5 GHz; frequency 32.8 GHz to 41.6 GHz; gain 16.6 dB; gain 21.9 dB; noise figure 5.1 dB; noise figure 7.2 dB; wideband LNA; Active filters; Dual band; Gain; Inductors; Microwave filters; Resonator filters; Semiconductor device measurement; BiCMOS; CMOS; RFIC; dual-band; low-noise amplifiers; millimeter-wave; multiband; notch filters;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6695112
