Title :
Cryogenic 8–18 GHz MMIC LNA using GaAs PHEMT
Author :
Chau-Ching Chiong ; Ding-Jie Huang ; Ching-Chi Chuang ; Yuh-Jing Hwang ; Ming-Tang Chen ; Huei Wang
Author_Institution :
Inst. of Astron. & Astrophys., Acad. Sinica, Taipei, Taiwan
Abstract :
An 8-18 GHz MMIC LNA is designed and fabricated using 0.15-μm GaAs pHEMT process. The peak LNA is more than 23 dB gain at room temperature and more than 27 dB gain at 17.5 K. At 18 GHz, the room temperature noise figure is 1.5 dB, and the best effective noise temperature at 17.5 K is 20 K. The measured noise data of the LNA are then fitted for the temperature dependent model. The derived equivalent drain temperature is proportional to the drain current, independent of the ambient temperature.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenic electronics; field effect MMIC; gallium arsenide; integrated circuit noise; low noise amplifiers; GaAs; GaAs PHEMT; ambient temperature; cryogenic MMIC LNA; drain current; equivalent drain temperature; frequency 8 GHz to 18 GHz; noise figure; noise temperature; size 0.15 mum; temperature 17.5 K; temperature 20 K; temperature 293 K to 298 K; temperature dependent model; Cryogenics; Gallium arsenide; MMICs; Noise; Semiconductor device measurement; Temperature dependence; Cryogenics; HEMTs; Low-noise amplifiers; MMICs;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6695113
