A G-Band (140–220 GHz) planar stubbed branch-line balun in BCB technology

Author

Carpenter, Sona ; Abbasi, Mohammadjavad ; Karandikar, Yogesh ; Nilsson, Per-Ake ; Zirath, Herbert

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenberg, Sweden

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

273

Lastpage

275

Abstract

A G-Band planar stubbed branch-line balun is designed and fabricated in 3μm thick BCB technology. This topology of the balun does not need thru-substrate via hole or thin-film resistor which makes it extremely suitable for realization on single-layer high-resistivity substrates commonly used at millimeter-wave or post-processed BCB layers on top of standard semi-insulating wafers. The design is simulated and validated by measurements. Measurement results on two fabricated back-to-back baluns show better than 10 dB input and output return loss and 3.2 dB insertion loss from 140 to 220 GHz.

Keywords

baluns; G-band planar stubbed branch-line balun; frequency 140 GHz to 220 GHz; loss 3.2 dB; millimeter-wave BCB layers; post-processed BCB layers; single-layer high-resistivity substrates; size 3 mum; standard semi-insulating wafers; Frequency measurement; Impedance matching; Loss measurement; Microwave circuits; Substrates; Topology; BCB; Balun; branch line; broadband 180 phase shifter; planar; stubs; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695117

Filename

6695117