A wide band 215–255 GHz CB differential amplifier in a 0.25-μm SiGe HBT technology

Author

Daekeun Yoon ; Namhyung Kim ; Pfeiffer, U. ; Heinemann, B. ; Jae-Sung Rieh

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

351

Lastpage

353

Abstract

A wideband amplifier operating beyond 200 GHz has been developed in a 0.25-μm SiGe HBT technology. The common-base (CB) amplifier consists of 5 differential stages and a pair of Marchand baluns to allow single-ended S-parameter measurement. The amplifier shows a flat gain over 215-255 GHz, leading to a 3-dB bandwidth of 40 GHz with a peak gain of 10 dB. It consumes a total DC power of 153 mW with a 1.5 V supply voltage. The fabricated chip occupies an area of 400 × 600 μm² including pads and baluns.

Keywords

Ge-Si alloys; S-parameters; baluns; differential amplifiers; heterojunction bipolar transistors; millimetre wave amplifiers; wideband amplifiers; Marchand baluns; SiGe; SiGe HBT technology; common-base amplifier; frequency 215 GHz to 255 GHz; power 153 mW; single-ended S-parameter measurement; size 0.25 mum; voltage 1.5 V; wide band CB differential amplifier; wideband amplifier; Capacitance; Gain; Heterojunction bipolar transistors; Impedance matching; Microwave amplifiers; Silicon germanium; Topology; broadband amplifiers; heteroj unction bipolar transistors; monolithic microwave integrated circuit; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695143

Filename

6695143