Title :
Homogeneity Characterization of Lattice Spacing of Silicon Single Crystals
Author :
Waseda, Atsushi ; Fujimoto, Hiroyuki ; Xiao Wei Zhang ; Kuramoto, Naoki ; Fujii, Kenichi
Author_Institution :
Nat. Metrol. Inst. of Japan, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
The homogeneity of the lattice spacing of silicon single crystals was investigated by a self-referenced lattice comparator. Strain measurements were performed on single crystals from an 28Si ingot (Avo28), which was used to determine the Avogadro constant. A swirl pattern was observed for sample 9.R1 cut from the tail side of the Avo28 ingot. The lattice spacing distribution of seed-side sample 4.R1 was smooth and homogeneous. The lattice spacing distribution was larger for the sample with higher impurities of carbon and oxygen.
Keywords :
elemental semiconductors; lattice constants; silicon; spatial variables measurement; strain measurement; Avo28 ingot; Avogadro constant; Si; homogeneity characterization; lattice spacing distribution; sample 9.R1 cut; seed-side sample 4.R1; self-referenced lattice comparator; silicon single crystal; strain measurement; swirl pattern; Carbon; Crystals; Diffraction; Impurities; Lattices; Metrology; Silicon; Avogadro constant; impurity; lattice comparator; lattice spacing; silicon single crystal; silicon single crystal.;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2014.2383091
