• DocumentCode
    662316
  • Title

    Reversible high efficiency amplifier/rectifier circuit for wireless power transmission system

  • Author

    Ishikawa, Ryo ; Honjo, Kazuhiko

  • Author_Institution
    Univ. of Electro-Commun., Chofu, Japan
  • fYear
    2013
  • fDate
    5-8 Nov. 2013
  • Firstpage
    74
  • Lastpage
    76
  • Abstract
    A reversible high-efficiency amplifier/rectifier circuit using one transistor has been proposed. For the gate side of the transistor, an input circuit for the amplifier and a gate adjusting circuit for the rectifier are prepared. By switching the circuits, the operation mode is changed. For the drain side of the transistor, a harmonic treatment circuit can be shared by both operations. The harmonic treatment induces high-efficiency operation not only for the amplifier, but also for the rectifier. To verify both operations, a GaAs pHEMT amplifier and a rectifier which varied only the gate-side circuit were designed and fabricated at 5.8 GHz. The fabricated amplifier exhibited a maximum drain efficiency of 71%, and the fabricated rectifier exhibited an RF-to-DC conversion efficiency of 68%.
  • Keywords
    amplifiers; gallium arsenide; harmonics; radiofrequency power transmission; rectifying circuits; RF-to-DC conversion efficiency; amplifier input circuit; circuit switching; gallium arsenide pHEMT amplifier; gate adjusting circuit; gate-side circuit; harmonic treatment circuit; reversible high efficiency amplifier/rectifier circuit; transistor drain side; transistor gate side; wireless power transmission system; HEMTs; Harmonic analysis; Logic gates; Radio frequency; Transmission line measurements; Voltage measurement; Wireless power transmission; amplifier; harmonic treatment; high efficiency; rectifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
  • Conference_Location
    Seoul
  • Type

    conf

  • DOI
    10.1109/APMC.2013.6695195
  • Filename
    6695195