An optimized process of high-performance integrated passive devices (IPDs) on SI-GaAs substrate for RF applications

An integrated passive device (IPD) technology by semi-insulating (SI) GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction for RF and microwave applications. In this paper, we develop an advanced optimized process for realizing IPDs to reduce fabrication time and total cost and to increase RF performances. The critical characteristics of lumped elements thin film resistor (TFR), spiral inductor and metal-insulator-metal (MIM) capacitor are optimized in this advanced process. A low-pass filter (LPF) for global system for mobile communications (GSM) is demonstrated by using this IPD process; it shows very good RF performances in spite of its small chip size and low cost, when compared with the recently reported literature.