Title :
High step down ratio (400 V to 1 V) phase shift full bridge DC/DC converter for data center power supplies with GaN FETs
Author :
Yutian Cui ; Tolbert, Leon M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase shift full bridge (PSFB) DC/DC converter with high step down ratio (66:1) is built with Gallium Nitride (GaN) FETs targeting at high efficiency. This paper mainly focuses on the study of a single 66 V to 1 V converter. Prototypes of the PSFB converter is designed, built, and tested. Preliminary experimental results are provided to verify the design.
Keywords :
DC-DC power convertors; III-V semiconductors; computer centres; gallium compounds; power field effect transistors; power supplies to apparatus; wide band gap semiconductors; GaN; GaN FET; data center power supplies; high step down ratio; input series; output parallel structure; phase shift full bridge DC/DC converter; single power stage architecture; voltage 400 V to 1 V; Capacitance; Inductance; Logic gates; MOSFET; Power supplies; Testing; Windings;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695554
