Ultrahigh voltage SiC bipolar devices

Author

Fukuda, Kenji ; Okamoto, Dai ; Harada, Shingo ; Tanaka, Yuichi ; Yonezawa, Yoshiyuki ; Deguchi, Tadayoshi ; Katakami, Shuji ; Ishimori, Hitoshi ; Takasu, Shinji ; Arai, Manabu ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Takei, Manabu ; Matsumoto, Kaname ; Ohs

Author_Institution

Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

32

Lastpage

35

Abstract

Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (R_diff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si₃N₄ DBC substrate are the best materials for package at high temperature and ultrahigh voltage.

Keywords

insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; silicon compounds; wide band gap semiconductors; DBC substrate; PiN diode; Si₃N₄; SiC; low differential specific on-resistance; nanotech resin; p-channel IGBT; package technology; ultrahigh voltage SiC bipolar devices; voltage 13 kV; Insulated gate bipolar transistors; PIN photodiodes; Resins; Silicon carbide; Substrates; Temperature; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695556

Filename

6695556