Title :
Design and testing of a 1 kW silicon-carbide (SiC) power module
Author :
Neft, Charles ; Hanna, Emil ; Mehrotra, Vivek ; Gould, Kyle ; Bhunia, Avijit
Author_Institution :
Teledyne Sci. & Imaging, Thousand Oaks, CA, USA
Abstract :
A high-temperature, SiC JFET power module was designed for use in a bi-directional, single-stage DC-DC converter. The converter is the interface between a 28 V battery and a 300 V bus, and is required to operate in a harsh environment with an ambient temperature of 120 °C and available 100 °C water-ethylene glycol (WEG) coolant. The power module consists of two JFETs in a single pole configuration with SiC Schottky diodes used as freewheeling diodes. The power module has been subjected to standard characterization tests and also extended (tens of hours) operational tests to confirm its suitability for the application. To the best of our knowledge this is the first demonstration of long term reliability of high temperature (175 °C device junction) SiC power electronics power conversion, with tens of hours of operation well past its infant mortality period.
Keywords :
DC-DC power convertors; Schottky diodes; junction gate field effect transistors; organic compounds; power field effect transistors; silicon compounds; water; wide band gap semiconductors; Schottky diodes; SiC; SiC JFET power module; bi-directional single-stage DC-DC converter; freewheeling diodes; harsh environment; power 1 kW; reliability; silicon-carbide power module; single pole configuration; temperature 100 degC; temperature 120 degC; temperature 175 degC; voltage 28 V; voltage 300 V; water-ethylene glycol coolant; Batteries; Coolants; JFETs; Load flow; Logic gates; Multichip modules; Silicon carbide;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695563
