Title :
Bipolar III-N high-power electronic devices
Author :
Dupuis, Russell ; Jeomoh Kim ; Tsung-Ting Kao ; Yi-Che Lee ; Lochner, Zachary ; Mi-Hee Ji ; Jae-Hyun Ryou ; Detchphrom, Theeradetch ; Shyh-Chiang Shen
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report high performance GaN-based npn heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) with state-of-the-art high collector current density (JC) and low knee voltage (Vknee). For HBTs grown on sapphire, the common-emitter I-V characteristics show high JC > 16 kA/cm2 with an offset voltage (Voffset) of <; 0.25V, Vknee <; 2.4 V and BVCEO = 105 V. High-temperature performance is also evaluated for InGaN HBTs grown on a free-standing GaN substrate. The device shows the peak current gain reduces from 93 at 25 C to 35 at 250C. Higher free hole concentration in the p-InGaN base is observed at elevated temperature that helps reduce the base resistance and Vknee in high-temperature InGaN HBTs operation.
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; wide band gap semiconductors; GaN; GaN-based npn heterojunction bipolar transistors; HBT; InGaN; MOCVD; base resistance; bipolar III-N high-power electronic devices; common-emitter I-V characteristics; free hole concentration; free-standing GaN substrate; high collector current density; low knee voltage; metalorganic chemical vapor deposition; sapphire; voltage 105 V; Fabrication; Gallium nitride; Heterojunction bipolar transistors; Performance evaluation; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695571
