Title :
Degradation of dynamic ON-resistance of AlGaN/GaN HEMTs under proton irradiation
Author :
Koehler, Andrew D. ; Anderson, Travis J. ; Weaver, Bradley D. ; Tadjer, Marko J. ; Hobart, Karl D. ; Kub, Francis J.
Author_Institution :
Electron. Sci. & Technol., U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
SiNx-passivated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates demonstrated high tolerance to 2 MeV proton irradiation, up to a dose of 6 × 1014 cm-2. Radiation-induced changes were observed in Hall mobility, two-dimensional electron gas sheet carrier density, sheet resistance, ON-resistance, transconductance, threshold voltage, and dynamic ON-resistance. Dynamic ON-resistance was measured by pulsing to ON-state from OFF-state quiescent points with drain voltages up to 20 V. The dynamic ON-resistance measured from high OFF-state quiescent voltages was more sensitive to irradiation than the DC and Hall parameters, making the dynamic ON-resistance measurement useful in characterizing radiation-induced degradation.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; carrier density; electrical resistivity; gallium compounds; high electron mobility transistors; proton effects; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; Hall mobility; OFF-state quiescent points; Si; Si substrates; SiNx; SiNx-passivated AlGaN-GaN HEMTs; drain voltages; dynamic ON-resistance degradation; electron volt energy 2 MeV; high electron mobility transistors; proton irradiation; radiation-induced degradation; sheet resistance; threshold voltage; transconductance; two-dimensional electron gas sheet carrier density; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; MODFETs; Protons; Radiation effects;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695575
