Title :
A 2 kW Gallium Nitride based switched capacitor three-port inverter
Author :
Cong Li ; Da Jiao ; Scott, Michael James ; Chengcheng Yao ; Lixing Fu ; Xintong Lu ; Chen, T. ; Jinzhu Li ; Jin Wang
Author_Institution :
Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA
Abstract :
This paper presents a single phase, multilevel, three-port, switched capacitor inverter based on Gallium Nitride (GaN) devices from Transphorm. The features of this inverter include one 200 V dc port, and two ac ports, which are two-level 120 V (1X inverter) and three-level 240 V (2X inverter), respectively. This circuit harness the superior characteristics of GaN devices, especially their faster switching speed and lower on resistance, to reduce the passive components size, increase overall power density, and achieve multiport operation. In this paper, complete circuit description, operation principles and device evaluation are provided. Also, to verify proposed functions, a 2 kW prototype has been built and the preliminary testing results have shown a 98.5% peak efficiency with two ac outputs.
Keywords :
III-V semiconductors; PWM invertors; gallium compounds; power semiconductor switches; prototypes; switched capacitor networks; wide band gap semiconductors; GaN; ac ports; circuit description; dc port; device evaluation; efficiency 98.5 percent; gallium nitride based switched capacitor three-port inverter; multiport operation; operation principles; passive components size; power 2 kW; power density; switching speed; voltage 120 V; voltage 200 V; voltage 240 V; Capacitors; Gallium nitride; Inverters; Pulse width modulation; Switches; Switching circuits; Testing;
Conference_Titel :
Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on
Conference_Location :
Columbus, OH
DOI :
10.1109/WiPDA.2013.6695577