Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Author

Pucheng Liu ; Kakushima, K. ; Iwai, Hisato ; Nakajima, Akitoshi ; Makino, Tatsuya ; Ogura, M. ; Nishizawa, Shinichi ; Ohashi, H.

Author_Institution

Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

155

Lastpage

158

Abstract

Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al_0.23Ga_0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron microscope, atomic force microscope, secondary ion mass spectroscopy, and temperature dependence Hall Effect measurements.

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; capacitance; gallium compounds; secondary ion mass spectra; semiconductor heterojunctions; transmission electron microscopy; two-dimensional electron gas; wide band gap semiconductors; GaN-Al_0.23Ga_0.77N; GaN-AlGaN heterointerface; X-ray diffraction; atomic force microscope; capacitance-voltage measurement; electrical properties; secondary ion mass spectroscopy; temperature dependence Hall Effect measurements; transmission electron microscope; transport mechanism; two-dimensional hole gas; Aluminum gallium nitride; Gallium nitride; HEMTs; Scattering; Temperature dependence; Temperature measurement; Two dimensional hole gas;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695585

Filename

6695585