Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

Author

Iucolano, F. ; Miccoli, Carmine ; Nicotra, M. ; Stocco, Andrea ; Rampazzo, Franco ; Zanandrea, Alberto ; Cinnera, Martino V. ; Patti, Anand ; Rinaudo, S. ; Soci, F. ; Chini, Alessandro ; Zanoni, Enrico ; Meneghesso, Gaudenzio

Author_Institution

STMicroelectron., IMS R&D, Catania, Italy

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

162

Lastpage

165

Abstract

In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic RON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; passivation; power semiconductor devices; semiconductor device models; silicon compounds; wide band gap semiconductors; AlGaN-GaN; Si₃N₄; SiN passivation layer; T-CAD simulations; drain leakage current; electrical characteristics; normally-off AlGaN-GaN HEMT; silicon concentration; Aluminum gallium nitride; Gallium nitride; Leakage currents; Logic gates; Passivation; Silicon; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695587

Filename

6695587