A cross batch characterization of GaN HEMT devices for power electronics applications

Author

Aggas, Jeffrey M. ; Jenkins, Luke L. ; Wilson, Christopher G. ; Moses, Justin D. ; Abell, William E. ; Rhea, Benjamin K. ; Dean, Robert N.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA

fYear

2013

fDate

27-29 Oct. 2013

Firstpage

170

Lastpage

173

Abstract

Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes have been. Inconsistent R_DS(ON) characteristics across manufactured batches can cause device failure as well as an imbalance in current distribution if the devices are used in a parallel fashion. The device of interest in this work is the Efficient Power Conversion (EPC) 2015 GaN HEMT. Five batches manufactured approximately six months apart are characterized. Manufacturing reliability analysis is presented and the results are compared with the device characteristics provided by EPC.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power transistors; semiconductor device reliability; switched mode power supplies; EPC2015 GaN HEMT; GaN; GaN HEMT devices; cross batch characterization; efficient power conversion; manufacturing reliability analysis; power electronics applications; switch-mode power supply applications; Gallium nitride; HEMTs; Manufacturing; Market research; Power electronics; Sociology; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on

Conference_Location

Columbus, OH

Type

conf

DOI

10.1109/WiPDA.2013.6695589

Filename

6695589