High-power GaN MMIC PA Over 40–4000MHz

Author

Ezzeddine, By Amin ; Hung, Hingloi Alfred ; Viveiros, Edward ; Huang, Ho-Chung

Author_Institution

AMCOM Commun. Inc., Gaithersburg, MD, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

We report a high-performance GaN MMIC power amplifier operating from 40MHz to 4,000MHz. The MMIC achieved 80W pulsed (100us pulse width and 10% duty cycle) output power (P5dB) with 54% efficiency at 40MHz, 50W with about 30% efficiency across most of the mid band, and gradually decreases to 30W with 22% efficiency at 4000MHz. Power gain is 25dB across the 40-4000MHz band. This ultra wideband performance is achieved by both tailoring the device output impedance, and using a unique wide-band, circuit-matching topology. Detailed design techniques of both the device and the matching circuit will be presented.

Keywords

MMIC power amplifiers; gallium compounds; ultra wideband technology; GaN; MMIC power amplifier; device output impedance; frequency 40 MHz to 4000 MHz; gain 25 dB; high-power MMIC PA; matching circuit; power 30 W; power 50 W; power 80 W; ultra wideband performance; unique wide-band circuit-matching topology; Gain; Gallium nitride; Impedance; Impedance matching; MMICs; Power amplifiers; Power generation; Broadband amplifiers; GaN MMIC PA; high-voltage techniques; microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697363

Filename

6697363