First demonstration of W-band millimeter-wave flexible electronics

Author

Sharifi, H. ; May, John ; Shinohara, K. ; Montes, M. ; McGuire, C. ; Kazemi, Hamed

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a novel method to fabricate substrate-less flexible and printable electronics for microwave and millimeter-wave applications. InP HEMT technology is utilized in this work to demonstrate first W-band completely flexible low noise amplifier (LNA). 10dB gain per stage is achieved at 100GHz for a 2×25μm device as expected from the EEHEMT model with simulated noise figure (NF) of 2.0. The fabrication process and measurement results are discussed in detail.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; flexible electronics; indium compounds; low noise amplifiers; millimetre wave amplifiers; nanofabrication; EEHEMT model; HEMT technology; InP; LNA; MIMIC; frequency 100 GHz; gain 10 dB; low noise amplifier; millimeter wave flexible electronics; millimetre wave amplifiers; printable electronics; size 25 mum; HEMTs; Indium phosphide; Millimeter wave measurements; Millimeter wave technology; Substrates; Thin film transistors; Transmission line measurements; Flexible/printable electronics; InP HEMT amplifier; MMIC; microwave and millimeter-wave (mmW);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697385

Filename

6697385