DocumentCode
664395
Title
Extremely low-frequency measurements using an active bias tee
Author
Nalli, Andrea ; Raffo, Antonio ; Avolio, Gustavo ; Vadala, Valeria ; Bosi, Gianni ; Schreurs, Dominique M. M.-P ; Vannini, Giorgio
Author_Institution
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
fYear
2013
fDate
2-7 June 2013
Firstpage
1
Lastpage
4
Abstract
An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; GaAs; GaN; HEMT; active bias tee; electron device; frequency 5 Hz to 400 kHz; low-frequency measurement; size 0.25 micron; Active inductors; Current measurement; Frequency measurement; Microwave amplifiers; Microwave circuits; Microwave transistors; Transistors; Bias tee; semiconductor device measurements; semiconductor device modeling; thermal effects; traps;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location
Seattle, WA
ISSN
0149-645X
Print_ISBN
978-1-4673-6177-4
Type
conf
DOI
10.1109/MWSYM.2013.6697402
Filename
6697402
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