Title :
Extremely low-frequency measurements using an active bias tee
Author :
Nalli, Andrea ; Raffo, Antonio ; Avolio, Gustavo ; Vadala, Valeria ; Bosi, Gianni ; Schreurs, Dominique M. M.-P ; Vannini, Giorgio
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
An active bias tee suitable for small- and large-signal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; GaAs; GaN; HEMT; active bias tee; electron device; frequency 5 Hz to 400 kHz; low-frequency measurement; size 0.25 micron; Active inductors; Current measurement; Frequency measurement; Microwave amplifiers; Microwave circuits; Microwave transistors; Transistors; Bias tee; semiconductor device measurements; semiconductor device modeling; thermal effects; traps;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697402
