A dual-band voltage-mode class-D PA for 0.8/1.8 GHz applications

Author

Wentzel, A. ; Chevtchenko, Serguei ; Kurpas, Paul ; Heinrich, Wolfgang

Author_Institution

Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a compact dual-band voltage-mode class-D power amplifier module suitable for the LTE frequency bands at 0.8 GHz and 1.8 GHz. It uses a broadband GaN voltage-mode PA MMIC and a hybrid lumped element dual-band filter structure. The amplifier can handle various pulse-mode or digital modulation schemes. For a pulse-width modulated input signal the PA achieves a maximum output power of 5.4 W at 0.85 GHz and 4.3 W at 1.8 GHz. Peak drain efficiency is 84% and 54% for 0.85 GHz and 1.8 GHz, respectively. At 6 dB power back-off, drain efficiencies of 40% (0.85 GHz) and 25% (1.8 GHz) are obtained.

Keywords

Long Term Evolution; MMIC amplifiers; power amplifiers; pulse modulation; LTE frequency bands; compact dual band voltage mode class D power amplifier module; digital modulation; dual band voltage mode class D PA; frequency 0.8 GHz; frequency 0.85 GHz; frequency 1.8 GHz; hybrid lumped element dual band filter structure; maximum output power; peak drain efficiency; power 4.3 W; power 5.4 W; pulse mode modulation; pulse width modulated input signal; voltage mode PA MMIC; Gallium nitride; MMICs; Voltage-mode PA; class S; digital PA; dual-band filters; dualband power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697417

Filename

6697417