A half-kW capable 28-V LDMOS RF power transistor in a small-footprint package

This paper presents a half-kW capable 28-V LDMOS single-ended RF power transistor designed in an air cavity ceramic package for 2.1 GHz applications. Compared to other existing products in the market with similar power levels, this transistor has its package size reduced by ~30% and demonstrates to date the highest power density per unit area in industry. The transistor has been designed using the latest generation of Freescale´s Airfast™ 28-V LDMOS technology. The novel gate engineering applied in this generation enables 2 dB higher gain than its precedent while retaining excellent efficiency, linearity and power density. A Class-AB power amplifier is designed with the transistor for optimized output power and gain flatness in the 2.11-2.17 GHz band. It delivers 426 watts of P_3dB power with 18.3 dB maximum gain.