Title :
Tunable duplex filter for adaptive duplexers of advanced LTE handsets
Author :
Pourakbar, Mohammadreza ; Linton, Lance ; Tormanen, Markus ; Faulkner, Michael
Author_Institution :
Coll. of Eng. & Sci., Victoria Univ., Melbourne, VIC, Australia
Abstract :
The new generation mobile handsets must support a large number of frequency bands and duplex offsets. Traditionally, an adaptive duplexing technique makes use of a wideband circulator to create initial isolation. A tunable duplex filter is presented in this paper, achieving the required tuning range for LTE Band 1. The demonstrated circuit is implemented in a 250nm Silicon on Sapphire (SOS) process, it provides an isolation of 19dB and 14dB at the transmit and the receive frequencies, respectively. The measured insertion loss from PA to antenna port is better than 3.8dB. The measured third-harmonic suppression is 45.9dB at an input of 24.5dBm. The implemented circuit occupies an area of 3.0mm×2.2mm.
Keywords :
Long Term Evolution; circuit tuning; elemental semiconductors; filters; harmonics suppression; multiplexing equipment; next generation networks; silicon; silicon-on-insulator; LTE band; SOS process; Si; adaptive duplexing technique; advanced LTE handsets; antenna port; duplex offsets; frequency bands; insertion loss; isolation; new generation mobile handsets; receive frequencies; silicon on sapphire process; size 250 nm; third-harmonic suppression; transmit frequencies; tunable duplex filter; tuning range; wideband circulator; Antenna measurements; Capacitors; Inductors; Insertion loss; Loss measurement; Semiconductor device measurement; Telephone sets; Digitally-tuned capacitors; Duplexer; LTE; Mobile phones; SOS process; Tunable filters;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697448