A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology

In this paper, the authors present a monolithically integrated W-band low-noise-amplifier realized in an 0.13μm SiGe BiCMOS technology. The design utilizes a two-stage cascode topology, with inductive emitter degeneration for simultaneous noise and power matching. The paper identifies critical design parameters, and presents careful modeling results. Measurement results show excellent agreement with the simulations, and the circuit achieves 20 dB gain and 4 dB noise figure up to 110 GHz. To the authors´ knowledge, this demonstrates the best noise performance up to date on a silicon platform in this frequency range.