Title :
A 25-to-70 GHz and low LO power mixer using modified SiGe NMOS-HBT Darlington cell for Gigabit BPSK demodulation
Author :
Wei-Chu Wang ; Shou-Hsien Weng ; Hong-Yeh Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
A binary phase shift keying (BPSK) demodulator using 0.18-μm SiGe process is presented in this paper. A hybrid modified SiGe NMOS-HBT Darlington cell is proposed for the circuit design. The driving LO power is further reduced as compared to the conventional Gilbert-cell and Darlington-cell mixers. This work exhibits a broad RF bandwidth from 25 to 70 GHz with a lower driving LO power of -1 dBm, a maximum conversion gain of 0 dB, and a data rate of 1.5 Gbps. This is the first attempt to demonstrate a broadband low LO power mixer using SiGe NMOS-HBT Darlington cell for BPSK demodulation.
Keywords :
Ge-Si alloys; MOSFET; demodulators; heterojunction bipolar transistors; low-power electronics; mixers (circuits); phase shift keying; BPSK demodulator; NMOS-HBT Darlington cell; RF bandwidth; SiGe; binary phase shift keying demodulator; bit rate 1.5 Gbit/s; broadband low LO power mixer; circuit design; driving LO power; frequency 25 GHz to 70 GHz; gigabit BPSK demodulation; size 0.18 mum; Bandwidth; Binary phase shift keying; Demodulation; Gain; Mixers; Radio frequency; Silicon germanium; BPSK; CMOS; Darlington; HBT; NMOS; SiGe; demodulator; millimeter-wave; mixer;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697469
