DocumentCode :
664475
Title :
Investigation of X-parameters modeling for accurate envelope tracking power amplifier system simulations
Author :
Casini, G. ; Cidronali, Alessandro ; Manes, Gianfranco
Author_Institution :
Dept. Inf. Eng., Univ. of Florence, Florence, Italy
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
This work reports the experimental evaluation of X-parameters models for the simulation of ET systems. We have extracted 2-port and 3-port X-parameters models from large signal vector measurements, for a GaAs PA with 40 dBm nominal peak power at 850 MHz. The data suggests that 3-port X-parameter model not only leads to an accuracy improvement during the estimation of average DE and ACLR but also permits the extraction of constant gain shaping functions that increase the overall system linearity.
Keywords :
III-V semiconductors; UHF amplifiers; gallium arsenide; integrated circuit modelling; power amplifiers; 2-port X-parameters models; 3-port X-parameters models; ACLR; ET systems; GaAs PA; average DE estimation; constant gain shaping functions; envelope tracking power amplifier; frequency 850 MHz; large signal vector measurements; Accuracy; Data models; Gain; Integrated circuit modeling; Modulation; Power measurement; Vectors; Envelope Tracking PA; X-parameters; large signal vector measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697484
Filename :
6697484
Link To Document :
بازگشت