An RF MEMS switch for 4G Front-Ends

Author

Seki, Takaya ; Yamamoto, Jun ; Murakami, Akira ; Yoshitake, Naoki ; Hinuma, Ken-ichi ; Fujiwara, Toshihito ; Sano, Ko ; Matsushita, Teruo ; Sato, Fumiaki ; Oba, Makoto

Author_Institution

PMEMS Project, OMRON Corp., Yasu, Japan

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

OMRON developed a practical single pole double throw (SPDT)-structured RF-MEMS switch for 4G Front-Ends of next generation mobile handsets. This RF-MEMS switch has not only a very low insertion loss of less than 0.25dB and a high isolation of more than 30dB up to 3GHz but also high linearity and very low harmonic generation. The switch achieves small size by using Through Silicon Via (TSV) structure. And also we demonstrate 3V driving switch by integrating a charge pump IC.

Keywords

4G mobile communication; charge pump circuits; harmonic generation; microswitches; next generation networks; three-dimensional integrated circuits; 4G front-ends; OMRON; SPDT-structured RF-MEMS switch; TSV structure; charge pump IC; driving switch; harmonic generation; insertion loss; next generation mobile handsets; single pole double throw; through silicon via structure; Actuators; Charge pumps; Radio frequency; Substrates; Switches; Through-silicon vias; Charge pump IC; Electrostatic actuator; RF MEMS; ohmic contacts; single pole double throw (SPDT);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697501

Filename

6697501