• DocumentCode
    664494
  • Title

    A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS

  • Author

    Agah, A. ; Jayamon, J. ; Asbeck, P. ; Buckwalter, J. ; Larson, Lawrence

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2013
  • fDate
    2-7 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A two-stage 90-GHz stacked-FET power amplifier is implemented in 45-nm SOI CMOS. Dual supply operation supports high gain, power and efficiency in the two-stage design. The amplifier exhibits greater than 15.8 dBm saturated output power with 10 dB peak power gain and achieves a record peak PAE of 11%. The PAE remains above 8% from 86 to 94 GHz. It occupies 0.05 mm2 excluding pads.
  • Keywords
    CMOS analogue integrated circuits; field effect MIMIC; field effect transistors; millimetre wave power amplifiers; silicon-on-insulator; SOI CMOS; dual supply operation; efficiency 11 percent; frequency 90 GHz; power amplifier; power gain; size 45 nm; two-stage stacked-FET; Bandwidth; CMOS integrated circuits; CMOS technology; Field effect transistors; Gain; Power amplifiers; Power generation; CMOS SOI; inter-stage matching; millimeter-wave; power amplifier; stacked PAs; two-stage PA;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
  • Conference_Location
    Seattle, WA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-6177-4
  • Type

    conf

  • DOI
    10.1109/MWSYM.2013.6697504
  • Filename
    6697504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=664494