Title :
A 92-GHz deterministic quadrature oscillator and N-push modulator in 120-nm SiGe BiCMOS
Author :
Gathman, Timothy D. ; Buckwalter, James F.
Author_Institution :
Qualcomm Technol., Inc., San Diego, CA, USA
Abstract :
A voltage-controlled traveling wave oscillator is proposed for deterministic quadrature phase generation. This oscillator topology contains four traveling-wave gain stages that provide 360o phase shift around transmission line ring. The oscillator has a center frequency of 92 GHz and a tuning range of 1.3 GHz. The constructive-wave oscillator is fabricated in a 120-nm SiGe BiCMOS process and occupies a total area of 0.65 × 0.67 mm2 with a power consumption of 32mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; modulators; voltage-controlled oscillators; N-push modulator; SiGe; SiGe BiCMOS; constructive-wave oscillator; deterministic quadrature oscillator; deterministic quadrature phase generation; frequency 1.3 GHz; frequency 92 GHz; oscillator topology; power 32 mW; power consumption; size 120 nm; transmission line ring; traveling-wave gain stages; voltage-controlled traveling wave oscillator; Delays; Frequency measurement; Gain; Harmonic analysis; Oscillators; Power transmission lines; Tuning; Quadrature oscillator; SiGe bipolar; frequency tuning range; harmonic; modulator; wideband;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697510
