Passives design for a high performance W-band amplifier

A high performance W-band LNA is designed in 0.13 μm SiGe BiCMOS technology by firstly deploying SC-GCPW input matching network, shielded cascode stage and partition layout. Noise figure of the LNA, parasitic coupling of the cascode stage and reverse isolation are considerably reduced. The LNA achieved a measured gain of above 45 dB, noise figure of 7.2 dB at 95 GHz and 19 mW power consumption in 0.13 μm BiCMOS which is the state-of-the-art on silicon. This LNA performance could help the W-band total power radiometer obtain a 0.5-K NEΔT.