RF-power GaN transistors with tunable BST pre-matching

Author

Bengtsson, Olof ; Maune, Holger ; Wiens, Andrew ; Chevtchenko, Serguei A. ; Jakoby, Rolf ; Heinrich, Wolfgang

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst. (FBH), Berlin, Germany

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A thick-film Barium-Strontium-Titanate (BST) varactor is evaluated as gate pre-matching element for integration in discrete RF-power GaN-HEMTs. The tunable pre-matching is connected to the gate of a 2 mm GaN cell and characterized by load-pull measurements in the 2 to 3 GHz range. The assembly shows large tunable impedance range with low impact on power performance. At 2.0 GHz gain is reduced by 3.6 dB to 20 dB. The saturated output power at more than 37.8 dBm and the linearity are unaffected.

Keywords

III-V semiconductors; barium compounds; gallium compounds; power HEMT; power transistors; strontium compounds; titanium compounds; varactors; wide band gap semiconductors; BST; GaN; RF power transistors; frequency 2 GHz to 3 GHz; gain 20 dB; load pull measurements; power HEMT; size 2 mm; tunable BST prematching; varactor; Assembly; Logic gates; Power generation; Transistors; Tuning; Varactors; Voltage measurement; Adaptive Matching; Ferroelectrics; Gallium Nitride; Power Amplifiers; Tunable Components;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697523

Filename

6697523