A new topology of active bandstop filters in MMIC technology for wideband applications

Author

Kamoun, Lotfi ; Kerherve, Eric ; Dueme, Philippe ; Plaze, Jean-Philippe ; Godara, Balwant

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A new topology of active bandstop filters is proposed in this paper. Two prototypes based on this topology have been implemented: the first one in GaN technology and the second one in GaAs technology. This topology allows reducing the 3 dB bandwidth in comparison with the only passive cell. The structure of both filters is a distributed structure. The first one allows a rejection of 65 dB at 2.9 GHz and the second one allows three states with a rejection around 45 dB at 2.3 GHz (state 1), at 2.47 GHz (state 2) and at 2.87 GHz (state 3). Both have associated passband from 1 GHz to 18 GHz.

Keywords

III-V semiconductors; MMIC; active filters; band-stop filters; gallium arsenide; microwave circuits; wide band gap semiconductors; GaAs; GaAs technology; GaN; GaN technology; MMIC technology; active bandstop filter; frequency 1 GHz to 18 GHz; frequency 2.3 GHz; frequency 2.47 GHz; frequency 2.87 GHz; frequency 2.9 GHz; passive cell; wideband application; Band-pass filters; Bandwidth; Gallium nitride; Microwave filters; Power harmonic filters; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697527

Filename

6697527