A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

This study presents a 53.6 GHz wideband direct injection-locked frequency divider (DILFD) using 65 nm CMOS technology. By operating a RF input transistor in subthreshold region and changing its forward body bias, the proposed DILFD achieves a 28.6 GHz (72%) locking range with 6.7 mW power consumption and 1 V supply voltage. When varying the supply voltage from 0.9 V to 1.1 V or its physical temperature from 253 K to 373 K, the measured locking range remains more than 22 GHz.