A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

Author

Wen-Lin Chen ; Shiao, Yu-Shao Jerry ; Hsuan-Der Yen ; Guo-Wei Huang ; Hsieh-Hung Hsieh ; Chewn-Pu Jou ; Fu-Lung Hsueh

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

This study presents a 53.6 GHz wideband direct injection-locked frequency divider (DILFD) using 65 nm CMOS technology. By operating a RF input transistor in subthreshold region and changing its forward body bias, the proposed DILFD achieves a 28.6 GHz (72%) locking range with 6.7 mW power consumption and 1 V supply voltage. When varying the supply voltage from 0.9 V to 1.1 V or its physical temperature from 253 K to 373 K, the measured locking range remains more than 22 GHz.

Keywords

CMOS integrated circuits; frequency dividers; CMOS technology; DILFD; RF input transistor; forward body bias; frequency 28.6 GHz; frequency 53.6 GHz; locking range; power 6.7 mW; power consumption; size 65 nm; subthreshold region; voltage 1 V; wideband direct injection-locked frequency divider; CMOS integrated circuits; Frequency conversion; Semiconductor device measurement; Sensitivity; Temperature measurement; Transistors; Voltage measurement; CMOS; injection-locked frequency divider (ILFD);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697536

Filename

6697536