60GHz Double-balanced drain-pumped up-conversion mixer using 90nm CMOS

Author

Insang Song ; Jaejin Lee ; Chulwoo Byeon ; Seongjun Cho ; Hongyi Kim ; Innyeal Oh ; Chulsoon Park

Author_Institution

Dept. of Electr. Eng., KAIST, Daejeon, South Korea

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A new type of drain-pumped mixer is proposed for a 60 GHz direct up-conversion using a standard 90nm CMOS process in this paper. Because no stacks are needed for the architecture, a high conversion gain (CG) thanks to high trans-conductance (gm) can be achieved while consuming low power. By configuring a balanced architecture for LO-to-RF isolation, the proposed mixer demonstrates CG of -5.1dB with a reasonable 0dBm LO power while maintaining low power dissipation of 16.3mW. Its LO-to-RF isolation is better than 30dB and size is only 0.35mm².

Keywords

CMOS integrated circuits; mixers (circuits); CMOS; conversion gain; direct up-conversion; double-balanced drain-pumped up-conversion mixer; frequency 60 GHz; power dissipation; size 90 nm; CMOS integrated circuits; CMOS technology; Mixers; Power dissipation; Power measurement; Radio frequency; Transistors; 60 GHz; CMOS; direct-conversion; mixer; up-conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697559

Filename

6697559