High-speed, High-efficiency millimeter-wave transmitters at 45 GHz in CMOS

Author

Agah, A. ; Dabag, H. ; Asbeck, P. ; Larson, Lawrence ; Buckwalter, J.

Author_Institution

Univ. of California - San Diego, La Jolla, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

Millimeter-wave power amplifiers realized in CMOS processes have demonstrated output power and power added efficiency exceeding 20 dBm and 30%, respectively. We describe efforts to achieve high power and high efficiency for mm-wave transmitters and linearize mm-wave PAs in fineline CMOS processes. We will present novel circuit approaches based on Doherty amplifiers and digital pre-distortion of high-power mm-wave CMOS PA to demonstrate low error-vector magnitude (EVM).

Keywords

CMOS analogue integrated circuits; millimetre wave power amplifiers; Doherty amplifiers; EVM; digital predistortion; error-vector magnitude; fineline CMOS processes; frequency 45 GHz; high-power mm-wave CMOS PA; linearize mm-wave PA; millimeter-wave power amplifiers; millimeter-wave transmitters; mm-wave transmitters; output power; power added efficiency; CMOS integrated circuits; Field effect transistors; Gain; Modulation; Power amplifiers; Power generation; Transmitters; CMOS SOI; I/Q modulator; mm-wave; mm-wave PA; mm-wave transmitter; pre-distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697578

Filename

6697578