Loss mechanism and high-low doping profile effects of silicon substrate with different resistivities at High frequency

Author

Wen Shu ; Shichijo, Sam ; Henderson, Rashaunda M.

Author_Institution

Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, coplanar waveguide (CPW) lines are measured up to 110 GHz to characterize 8000 Ω-cm, 15 Ω-cm and 0.015 Ω-cm silicon substrates. The characteristic impedance and attenuation constant for the three substrates are compared and analyzed. The effects of the conductor surface roughness are investigated. The attenuation as a function of high-low doping profile has been investigated for 8000 Ω-cm and 15 Ω-cm substrates. Based on the simulation results, a thin layer of high doping concentration is shown to dominate the attenuation.

Keywords

coplanar waveguides; doping profiles; electrical resistivity; elemental semiconductors; silicon; CPW lines; Si; attenuation constant; characteristic impedance; conductor surface roughness; coplanar waveguide lines; high doping concentration; high-low doping profile effect; Attenuation; Conductivity; Doping; Frequency measurement; Loss measurement; Silicon; Substrates; Coplanar waveguide; attenuation; characteristic impedance; high-low doping profile;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697630

Filename

6697630