DocumentCode :
664634
Title :
Lifetime effects of drive voltage for a commercially-available ohmic-contact RF MEMS switch
Author :
Fruehling, Adam ; Wei Yang ; Peroulis, Dimitrios
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
This work presents the first report on the influence of actuation voltage on high-voltage-switching lifetime with a population study of commercially-available ohmic contact RF MEMS switches manufactured by Omron. For switches actuated with a bias voltage of 15% less than Omron´s specified operating point a greater than 6× increase in lifetime is observed for 75% of devices. This is despite the fact that a 15% reduced voltage increases the bouncing behavior of the switch. Simulated results suggest that it is likely more important that the 15% reduced voltage decreases the impact velocity and force by 24% and 42% respectively. While the increase in switch lifetime is significant, it comes with a penalty of increased dispersion in the achieved contact resistance (1-3.1 Ω versus 1-2.5 Ω) and increased settling time (48 μs versus 13 μs).
Keywords :
microswitches; semiconductor device reliability; actuation voltage; bias voltage; bouncing behavior; commercially-available ohmic-contact RF MEMS switch; drive voltage; force; high-voltage-switching lifetime; impact velocity; switch lifetime effects; Contacts; Force; Microswitches; Radio frequency; Sociology; Statistics; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697645
Filename :
6697645
Link To Document :
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