A 600 GHz InP HBT amplifier using cross-coupled feedback stabilization and dual-Differential Power Combining

Author

Munkyo Seo ; Urteaga, M. ; Hacker, Jorg ; Young, Abram ; Skalare, Anders ; Lin, Richard ; Rodwell, M.

Author_Institution

Teledyne Sci. Co., Thousand Oaks, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

We report a 600 GHz amplifier with > 30 dB peak gain, based on 12 cascaded differential common-base (CB) stages, in a 130 nm InP HBT process. Three consecutive CB stages are grouped as a unit gain block, sharing a common bias current. Each CB stage is stabilized by cross-coupled capacitive feedback. Output powers from two differential branches are combined through a 4-way combiner, resulting in a 4× increase in power compared to a single single-ended output stage. On-wafer testing in WR-1.5 band (500-750 GHz) shows that the amplifier exhibits > 20 dB of gain up to 620 GHz, with +2.8 dBm of saturated output power at 585 GHz, while consuming 455 mW.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; submillimetre wave amplifiers; submillimetre wave transistors; 4-way combiner; HBT amplifier; HBT process; bias current; cross-coupled capacitive feedback; cross-coupled feedback stabilization; differential common-base stages; dual-differential power combining; frequency 500 GHz to 750 GHz; gain 20 dB; gain 30 dB; on-wafer testing; power 455 mW; single-ended output stage; size 130 nm; unit gain block; Gain; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Power amplifiers; Power generation; Topology; Terahertz; amplifiers; cross-coupled feedback; hetero-junction bipolar transistors; power combining;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697692

Filename

6697692