Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations

A novel approach to perform two-tone and modulated signal linearity analysis with TCAD device simulators is reported. The X-parameters of the simulated device are first extracted through one-tone large-signal coupled circuit-device simulations by exploiting, in our case, a coupled Harmonic Balance - TCAD Monte Carlo particle-based device simulator. Then, large signal linearity figures of merit such as two-tone intermodulation distortion and adjacent channel leakage ratio are obtained by a commercial Circuit Envelope simulator and the one-tone X-parameter compact model. In such a way, the TCAD simulation of a prohibitive number of RF cycles, due to the slowly varying envelope of the modulated carrier, is avoided.