Title :
A silicon-based, fully integrated pulse electron paramagnetic resonance system for mm-wave spectroscopy
Author :
Chen, Ci ; Seifi, Payam ; Babakhani, A.
Author_Institution :
Rice Univ., Houston, TX, USA
Abstract :
An integrated transceiver for time-domain EPR spectroscopy is implemented using a 0.13μm SiGe BiCMOS technology. The system utilizes an on-chip resonator to study time domain relaxation behavior of paramagnetic samples, i.e. materials with unpaired electron spins. The single-chip EPR spectrometer consists of an EPR resonator, 22-26GHz tunable VCO, a programmable pulse generation block, RF buffer and power amplifier, a multi-stage LNA, and down-conversion mixer all in a 2mm2-size chip area.
Keywords :
BiCMOS integrated circuits; low noise amplifiers; millimetre wave power amplifiers; mixers (circuits); paramagnetic resonance; radio transceivers; resonators; silicon; voltage-controlled oscillators; EPR resonator; RF buffer; SiGe BiCMOS technology; VCO; down-conversion mixer; electron paramagnetic resonance system; electron spins; frequency 22 GHz to 26 GHz; integrated transceiver; mm-wave spectroscopy; multistage LNA; on-chip resonator; power amplifier; programmable pulse generation block; silicon; single-chip EPR spectrometer; size 0.13 mum; time domain relaxation; time-domain EPR spectroscopy; Magnetic fields; Power amplifiers; Radio frequency; System-on-chip; Time-domain analysis; Transmitters; Voltage-controlled oscillators; Electron paramagnetic resonance; fully integrated; mm-wave; silicon; spectroscopy;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697730
