Minimizing attenuation of coplanar waveguide on lossy silicon substrates up to 300 GHz

Author

Islam, Rashed ; Henderson, Rashaunda M.

Author_Institution

Univ. of Texas at Dallas, Richardson, TX, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

The attenuation constant of coplanar waveguide (CPW), conductor backed CPW (CBCPW) and grounded CPW (GCPW) interconnects is compared up to 300 GHz. Spin-on benzocyclobutene (BCB) dielectric is deposited on low resistivity (10 Ω-cm) silicon (Si) substrates to characterize the loss of interconnects at millimeter-wave (mm-wave) frequencies. CPW fabricated on 58 μm of BCB has similar performance as CBCPW and GCPW fabricated on 8.5 μm and 7.6 μm of BCB, respectively. CPW with thick dielectric layers present attenuation of 1.89 dB/mm at 300 GHz, whereas CBCPW and GCPW have an attenuation of 1.87 dB/mm and 1.96 dB/mm, respectively, at the same frequency.

Keywords

coplanar waveguides; elemental semiconductors; silicon; BCB dielectric; CBCPW interconnect; GCPW interconnect; Si; attenuation constant; attenuation minimization; conductor-backed CPW interconnect; coplanar waveguide; frequency 300 GHz; grounded CPW interconnect; interconnect loss; lossy silicon substrates; low-resistivity silicon substrate; millimeter-wave frequency; mm-wave frequency; size 58 mum; size 7.6 mum; size 8.5 mum; spin-on benzocyclobutene dielectric; Attenuation; CMOS integrated circuits; Coplanar waveguides; Dielectrics; Integrated circuit interconnections; Silicon; Substrates; Attenuation constant; BCB; CBCPW; CPW; GCPW; mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697736

Filename

6697736