Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation

Author

Yan, Jonmei J. ; Young-Pyo Hong ; Shinjo, Shintaro ; Mukai, Koji ; Asbeck, P.M.

Author_Institution

ECE Dept., Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A broadband push-pull power amplifier with power added efficiency (PAE) greater than 47% from 500 MHz to 2.5 GHz is reported. The power amplifier comprises two GaN integrated circuits whose outputs are combined with a broadband balun to achieve power up to 20W. Each IC contains two stacked GaN HEMTs and is designed to employ a load impedance of 25Ω without any reactive matching in order to achieve broadband operation. To provide a better input impedance match to 25Ω and to reduce gain variation over frequency, an RC feedback network is used. Measurements, under CW excitation, demonstrated greater than 63% power added efficiency at select frequencies and greater than 47% over the entire bandwidth.

Keywords

baluns; high electron mobility transistors; power amplifiers; HEMT; RC feedback network; broadband balun; broadband high PAE; broadband operation; broadband push pull power amplifier; frequency 500 MHz to 2.5 GHz; gain variation; impedance match; integrated circuits; load impedance; power added efficiency; reactive matching; Broadband amplifiers; Frequency measurement; Gain; Impedance; Impedance matching; Power amplifiers; Broadband; bandwidth; efficiency; gallium nitride (GaN); integrated circuit (IC); multiband; power amplifier; push-pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697741

Filename

6697741