Linearity analysis of intrinsically switchable ferroelectric FBAR filters

Author

Seungku Lee ; Lee, Victor ; Sis, Seyit Ahmet ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

This paper presents the linearity analysis of intrinsically switchable ferroelectric thin-film bulk acoustic resonator (FBAR) filters for the first time. The FBARs are based on the barium-strontium-titanate (BST) ferroelectric thin-film material. BST FBAR filters composed of two series FBARs and one shunt FBAR are designed, fabricated, and measured. Input-referred third-order intercept point (IIP3) of more than 26 dBm for a 1.6-GHz filter with an insertion loss of 4.1 dB is obtained.

Keywords

ferroelectric devices; resonator filters; thin film circuits; BST ferroelectric thin-film material; IIP3; barium-strontium-titanate ferroelectric thin-film material; input-referred third-order intercept point; intrinsically switchable ferroelectric FBAR filters; linearity analysis; thin-film bulk acoustic resonator filters; Film bulk acoustic resonators; Integrated circuit modeling; Linearity; Microwave filters; Resonator filters; Switches; Voltage measurement; Electrostriction; ferroelectric devices; film bulk acoustic resonators (FBARs); intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697782

Filename

6697782