Title :
Optimum input two-port for stabilisation of transistors
Author :
Binh Huy Le ; Tung Anh Tran ; Zimmer, G.
Author_Institution :
Fac. of Electr. Eng., Vietnamese German Univ., Binh Duong, Vietnam
Abstract :
In this paper a two step process is described to find an optimum input two-port to stabilise a transistor under the constraint of minimising the additionally introduced mean gain degradation. The method is successfully applied to four gallium nitride rf-power transistors of different nominal saturation power.
Keywords :
III-V semiconductors; gallium compounds; microwave power transistors; wide band gap semiconductors; GaN; gallium nitride rf-power transistors; mean gain degradation; nominal saturation power; optimum input two-port; transistor stabilisation; Circuit stability; Microwave theory and techniques; Ports (Computers); Resistors; Scattering parameters; Stability analysis; Transistors;
Conference_Titel :
Advanced Technologies for Communications (ATC), 2013 International Conference on
Conference_Location :
Ho Chi Minh City
Print_ISBN :
978-1-4799-1086-1
DOI :
10.1109/ATC.2013.6698172
