DocumentCode
665012
Title
Optimum input two-port for stabilisation of transistors
Author
Binh Huy Le ; Tung Anh Tran ; Zimmer, G.
Author_Institution
Fac. of Electr. Eng., Vietnamese German Univ., Binh Duong, Vietnam
fYear
2013
fDate
16-18 Oct. 2013
Firstpage
531
Lastpage
534
Abstract
In this paper a two step process is described to find an optimum input two-port to stabilise a transistor under the constraint of minimising the additionally introduced mean gain degradation. The method is successfully applied to four gallium nitride rf-power transistors of different nominal saturation power.
Keywords
III-V semiconductors; gallium compounds; microwave power transistors; wide band gap semiconductors; GaN; gallium nitride rf-power transistors; mean gain degradation; nominal saturation power; optimum input two-port; transistor stabilisation; Circuit stability; Microwave theory and techniques; Ports (Computers); Resistors; Scattering parameters; Stability analysis; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Technologies for Communications (ATC), 2013 International Conference on
Conference_Location
Ho Chi Minh City
ISSN
2162-1020
Print_ISBN
978-1-4799-1086-1
Type
conf
DOI
10.1109/ATC.2013.6698172
Filename
6698172
Link To Document