Title :
A Class-AB 0.8GHz–2.1GHz SiGe HBT broadband power amplifier
Author :
Li Wenyuan ; Bian Miaomiao ; Wang Zhigong
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A Class-AB 0.8 GHz-2.1 GHz broadband power amplifier integrated circuit is present in 0.13 μm SiGe HBT technology. The power amplifier circuit adopts broadband matching, compensated matching, high-linearity, and temperature-insensitive bias technique. The simulation results show, when the circuit biased at 3.3 V, the power amplifier maximum power gain is 24 dB, its 3-dB bandwidth is 649 MHz-2151 MHz, output 1 dB compression point is 25.9 dBm, and its maximum output power is 28.4 dBm. The power added efficiency is better than 31%.
Keywords :
Ge-Si alloys; bipolar integrated circuits; microwave power amplifiers; wideband amplifiers; SiGe; broadband matching; compensated matching; frequency 0.8 GHz to 2.1 GHz; gain 24 dB; power amplifier circuit; size 0.13 mum; temperature-insensitive bias technique; voltage 3.3 V; Bandwidth; Broadband amplifiers; Heterojunction bipolar transistors; Power amplifiers; Silicon germanium; Broadband power amplifier; Hetero-junction bipolar transistor; broadband matching networks; compensated matching; pseudo-differential structure;
Conference_Titel :
Advanced Technologies for Communications (ATC), 2013 International Conference on
Conference_Location :
Ho Chi Minh City
Print_ISBN :
978-1-4799-1086-1
DOI :
10.1109/ATC.2013.6698207
