Title :
Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode
Author :
Arshad, T.S.M. ; Othman, M.A. ; Yasin, N.Y.M. ; Taib, S.N. ; Ismail, M.M. ; Napiah, Z.A.F.M. ; Sulaiman, H.A. ; Hussain, Mutia Nurulhusna ; Said, M.A.M. ; Misran, M.H. ; Ramlee, R.A.
Author_Institution :
Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia
Abstract :
This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode.
Keywords :
attenuators; elemental semiconductors; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; silicon; IV characteristics analysis; InGaAs; PIN photodiode; RF switches; Si; attenuators; intrinsic region; negative region; photodetectors; positive region; radiofrequency switches; Doping; Indium gallium arsenide; Noise; PIN photodiodes; Silicon; IV Characteristics; Indium gallium Arsenide (InGaAs); PIN Photodiode; Silicon (Si);
Conference_Titel :
Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2013 3rd International Conference on
Conference_Location :
Bandung
Print_ISBN :
978-1-4799-1649-8
DOI :
10.1109/ICICI-BME.2013.6698467
