Variable junction temperature analysis in Silicon IMPATT diode

Author

Arshad, T.S.M. ; Othman, M.A. ; Yasin, N.Y.M. ; Taib, S.N. ; Napiah, Z.A.F.M. ; Hussain, Mutia Nurulhusna ; Rahim, Yahaya Abd ; Pee, A. N. Che ; Ismail, M.M. ; Misran, M.H. ; Said, M.A.M. ; Sulaiman, H.A. ; Ramlee, R.A.

Author_Institution

Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia

fYear

2013

fDate

7-8 Nov. 2013

Firstpage

76

Lastpage

79

Abstract

This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.

Keywords

IMPATT diodes; carrier mobility; elemental semiconductors; semiconductor junctions; silicon; D-band frequency; SDR IMPATT diode; Si; carrier mobility; electric field; variable junction temperature analysis; Electric fields; Fabrication; Junctions; Millimeter wave technology; Semiconductor diodes; Silicon; Temperature; IMPATT diode; IV characteristics; electric field; junction temperature; mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2013 3rd International Conference on

Conference_Location

Bandung

Print_ISBN

978-1-4799-1649-8

Type

conf

DOI

10.1109/ICICI-BME.2013.6698468

Filename

6698468