Title :
Variable junction temperature analysis in Silicon IMPATT diode
Author :
Arshad, T.S.M. ; Othman, M.A. ; Yasin, N.Y.M. ; Taib, S.N. ; Napiah, Z.A.F.M. ; Hussain, Mutia Nurulhusna ; Rahim, Yahaya Abd ; Pee, A. N. Che ; Ismail, M.M. ; Misran, M.H. ; Said, M.A.M. ; Sulaiman, H.A. ; Ramlee, R.A.
Author_Institution :
Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia
Abstract :
This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.
Keywords :
IMPATT diodes; carrier mobility; elemental semiconductors; semiconductor junctions; silicon; D-band frequency; SDR IMPATT diode; Si; carrier mobility; electric field; variable junction temperature analysis; Electric fields; Fabrication; Junctions; Millimeter wave technology; Semiconductor diodes; Silicon; Temperature; IMPATT diode; IV characteristics; electric field; junction temperature; mobility;
Conference_Titel :
Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2013 3rd International Conference on
Conference_Location :
Bandung
Print_ISBN :
978-1-4799-1649-8
DOI :
10.1109/ICICI-BME.2013.6698468
