DocumentCode
665285
Title
Analysis of stress in silicon-based microsystems by X-ray diffraction techniques
Author
Bandi, Thejesh ; Dommann, A. ; Neels, A.
Author_Institution
Microsyst. Technol. Div., CSEM, Neuchâtel, Switzerland
fYear
2013
fDate
9-12 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
Packaging-induced stresses and residual stresses from fabrication can pose a serious threat to the long term functioning of microsystems. Reliability studies on potential failure sources have an impact on MEMS design and support efforts to assure the required performance over the full life cycle. High-resolution x-ray diffraction is a powerful method providing key information on stresses and defects in micro-electro-mechanical systems (MEMS) and supplements other analysis techniques applied in microtechnology. Advanced High Resolution X-ray Diffraction (HRXRD) Methods are discussed for the analysis packaging-induced stain in microsystems.
Keywords
X-ray diffraction; electronics packaging; elemental semiconductors; internal stresses; micromechanical devices; reliability; silicon; stress analysis; HRXRD; MEMS design; failure sources; high resolution X-ray diffraction; microelectromechanical systems; packaging induced stresses; reliability; residual stresses; silicon based microsystems; stress analysis; Diffraction; Micromechanical devices; Packaging; Reliability; Strain; Stress; X-ray diffraction; HRXRD; Micro-electro-mechanical system; Reliability; Strain; Stress; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Packaging Conference (EMPC) , 2013 European
Conference_Location
Grenoble
Type
conf
Filename
6698602
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